Abstract
ABSTRACTA stabilized three color piinip sensor for high illumination conditions was developed. The spectral response of the novel device shows a maximum at 480nm, 530nm and 630nm changing the applied bias voltage from −0·2V, −2·OV to 2·OV, respectively. Only a slight influence on the device performances is observed after more than 100h light soaking under AM1·5 illumination conditions. This is achieved by employing low temperature deposited a-Si:H with high hydrogen dilution and a microcrystalline silicon layer in the top diode of the sensor. For piinip detector systems with different absorption materials in the top diode the influence of light induced degradation on the spectral response and the dark current is discussed. Furthermore, the transient behavior of the new stabilized detector is presented.
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