Abstract
Strong temperature dependence of piezoelectricity (d33) attributed to morphotropic/polymorphic transition at room temperature limits the practical application of high performance lead-free piezoceramics. This work found aging induced domain memory effect is effective stabilizing d33 through ferroelectric orthorhombic (O)-tetragonal (T) transition together with a large room temperature d33 (d33@RT) in Mn doped lead-free 55Ba(Ti0.8Zr0.2)O3-45(Ba0.7Ca0.3)TiO3 piezoceramics: 23.2% d33 variation through O-T transition and a large d33@RT ∼ 323 pC/N for doped one when compared with those of undoped one (96.8% d33 variation and d33@RT ∼ 278 pC/N). Restoring force induced by defect dipoles according to the symmetry conforming short-range ordering principle has been demonstrated with internal bias field and double hysteresis loops, while the outcoming domain memory effect, responsible for the stabilized behaviors, has been revealed with transmission electron microscopy observation and phase-field simulation. Thus, aging induced domain memory effect is effective achieving stabilized behaviors and large d33@RT simultaneously.
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