Stabilized copper plating method by programmed electroplated current: Accumulation of densely packed copper grains in the interconnect

Abstract

In this work, we programmed the plating current to stack the different size of copper (Cu) grain and analyzed the relation between the sequence of different Cu grain size and the stability of the residual stress. The residual stress was measured with varying times of annealing process in order to reach the purpose of simulating the actual Cu interconnect process. We found that varied plating strategy will make different stabilization condition of residual stress through the proof of X-ray diffraction (XRD) and optical parallel beams reflection (PBR) method. The accumulation of Cu grains, formed by Cu grain with successive variation in grain size, would enhance the packing density better than only single grain size in the finite space. The high density of the grain boundary in the electroplated Cu film will be eliminated through annealing process and it will help to suppress the void formation in further interconnect process. The electroplated Cu film with the plating current of saw tooth wave can soon reach a stable tensile stress through annealing since the Cu grains with high packing density will be quickly eliminated to approach the minimum of the strain energy which reflects to variation in the texture of Cu (200). The result of this work illustrates the importance of how to stack different size of Cu grain, for achieving a densely packed Cu film which close to the Cu bulk.