Abstract
We report on a high-efficiency triple-junction thin-film silicon solar cell fabricated using the substrate configuration. An undoped hydrogenated amorphous silicon (a-Si:H) solar cell grown using triode plasma-enhanced chemical vapor deposition, which is more stable against light soaking, was applied to the a-Si:H/μc-Si:H/μc-Si:H triple-junction cells with honeycomb-textured substrates. To find the best balance in short circuit density and fill factor, we quantitatively investigated the effect of current mismatch on triple-junction cells. Accordingly, a stabilized efficiency of 14.04% was achieved in an a-Si:H/μc-Si:H/μc-Si:H triple-junction solar cell with a minimum light-induced degradation of 4%, setting a new record in this type of solar cells.
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