Abstract
Mobile ionic charge‐related instability in Mo‐gate MOS devices has been successfully prevented by high temperature forming gas annealing above 900°C, combined with Mo or Ta‐Mo alloy gate electrodes. films were deposited by RF sputtering in a mixed and Ar ambient. It is concluded that sodium diffusion from Mo‐gate metal into the gate is prevented by forming gas annealing above 900°C, and that its effect is enhanced by in Mo films. It is also revealed that, when Ta‐Mo (7 atom percent Ta) alloy gate structures are used, high temperature forming gas annealing does not degrade other MOS characteristics and maintains good stability under short‐term bias‐temperature stress aging.
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