Abstract

A nanocomposite Ni–B/Ga(As)Ox/GaAs photoanode fabricated by combining molecular beam epitaxy with in situ photoassisted electrodeposition enables efficient and stable photoelectrochemical water splitting.

Highlights

  • The direct light-driven splitting of water is one of the most costeffective methods to convert solar energy into a storable and transportable form of energy (H2).[1]

  • In order to fabricate a stable and efficient device for solar fuel synthesis, we have focused on the nickel borate (Ni–B) surface catalyst as a hole trapping site on top of gallium arsenide (GaAs) to suppress the photocorrosion reaction caused by accumulated holes on the GaAs surface and facilitate charge separation

  • We have demonstrated a novel strategy to achieve a very high and more importantly stable photocurrent by using GaAs photoanodes using a reproducible and robust method

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Summary

Introduction

In a PEC water splitting system, oxygen evolution is the rate determining step and research on utilizing GaAs as a photoanode has attracted considerable attention.[2]. We previously reported that an earth-abundant catalyst, nickel borate (Ni–B), can be coupled onto ZnO photoanodes to dramatically enhance the holes' efficiency for the water oxidation reaction and improve the ZnO stability.[14] in order to fabricate a stable and efficient device for solar fuel synthesis, we have focused on the Ni–B surface catalyst as a hole trapping site on top of GaAs to suppress the photocorrosion reaction caused by accumulated holes on the GaAs surface and facilitate charge separation. In situ photoassisted electrodeposition of Ni–B onto the p–n GaAs photoanode was able to generate a monolithic layer of Ni–B/Ga(As)Ox on GaAs, which acts as a catalytic and passivation layer to protect GaAs against photocorrosion Such a procedure resulted in a stable photocurrent and the surface treatment for the loading of water oxidation catalysts (Ni–B) on GaAs was discussed in detail. The growth was monitored with a re ection high-energy electron diffraction system, which includes a high energy electron gun, phosphor screen, and CCD camera

Pre-treatment of the GaAs surface
Preparation of GaAs photoanodes
Materials characterization
Photoelectrochemical measurements
Effect of GaAs surface architecture
Effect of the electrolyte pH value
Effect of Ni–B surface catalyst deposition time
Conclusions
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