Abstract
The process of macropore formation in silicon electrodes has been investigated by electrochemical etching. The stationary distribution of the concentration of non-equilibrium holes with thickness of n-Si films on irradiation with strongly absorbed light on the side opposite to the semiconductor-electrolyte contact has been calculated. A regime for irradiation of the semiconductor anode and the electric field intensity during pore formation which provides a stationary concentration of holes at the extremities of the macropores has been determined. The relation of the diameters of cylindrical pores to the extent of doping of n-Si with additives (to the lifetime of non-equilibrium charge carrier) has been studied.
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