Abstract
RuO 2 thin film resistors were deposited by reactive sputtering at room temperature on SiO 2/Si or ceramic substrates. The temperature coefficient of resistance (TCR) was adjusted to near zero using a post-deposition annealing process. High stability in TCR was proven under tests of long-term thermal storage, high humidity and power aging. Patterned samples were made from a lift-off process and resistors in a two orders range of resistance exhibited a uniform property. Using current-voltage-temperature ( I V T) measurements, different conduction mechanisms were found for samples with positive, near zero and negative TCRs.
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