Abstract
Phase-separated In 0.53Ga 0.47As epitaxial layers were grown by liquid phase epitaxy on (001) InP substrates. To investigate the stability of the microstructure, two types of Zn addition experiments were carried out: Zn in-diffusion anneals, and growth of Zn-doped layers followed by annealing (pre-doping experiment). The in-diffusion anneal resulted in a homogeneous microstructure, indicating that the phase-separated microstructure is not the ground state in as-grown InGaAs layers. However, annealing of the pre-doped layer has little effect on the microstructure. Arguments have been developed to rationalize these observations.
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