Abstract
An experimental technique of phosphorus doping into oxide is described. Evaluation of the effectiveness of these films is made by studying bias, temperature, and time dependence of the threshold voltage stability of MOSFET devices fabricated using this phosphorus‐doped oxide as gate dielectric. Experimental data is analyzed in the light of two mechanisms known to exist in such phosphosilicate glass (PSG) layers and is shown to be in good agreement with them. It is shown that the threshold voltage stability can be maintained to within 0.03V under device operating conditions with realistic contamination levels (generally ). Results also indicate that the polarizability obeys with .
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