Abstract
Chemical mechanical polishing is an essential process in the production of copper-based chips. On this work, the stability of hydrogen peroxide (<TEX>$H_{2}O_{2}$</TEX>) as an oxidizer of copper CMP slurry has been investigated. <TEX>$H_{2}O_{2}$</TEX> is known as the most common oxidizer in copper CMP slurry. But <TEX>$H_{2}O_{2}$</TEX> is so unstable that its stabilization is needed using as an oxidizer. As adding KOH as a pH buffering agent, stability of <TEX>$H_{2}O_{2}$</TEX> decreased. However, <TEX>$H_{2}O_{2}$</TEX> stability in slurry went up with putting in small amount of BTA as a film forming agent. There was no difference of <TEX>$H_{2}O_{2}$</TEX> stability between pH buffering agents KOH and TMAH at similar pH value. Addition of <TEX>$H_{2}O_{2}$</TEX> in slurry in advance of bead milling led to better stability than adding after bead milling. Adding phosphoric acid resulted in the higher stability. Using alumina C as an abrasive was good at stabilizing for <TEX>$H_{2}O_{2}$</TEX>.
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