Abstract
The different cleaning solution; HCl and HF solution are used to remove the suboxide and oxide component on Ge surface. The HCl cleaning results chlorine (Cl) termination on Ge surface whereas no Fluorine (F) termination was observed just after HF cleaning. The growth of Ge oxide is studied after treated with HCl cleaning on two surface orientations; (100) and (111), respectively in dry oxygen ambient and cleanroom air by spectroscopic ellipsometry (SE) and x-ray photoelectron spectroscopy (XPS). A clear step and terrace trend was observed for the oxidation growth of Ge (100) and Ge (111) in dry oxygen ambient compared to in clean room air. This trend shows the difference in surface reaction of Ge oxidation as humidity varies. The stability of chlorine termination of Ge (111) than Ge (100) explains the slower growth of oxidation in dry oxygen ambient.
Highlights
The water absorption on the semiconductor surface play important roles nanotechnology and give the effects on the surface chemistry
This paper shows how the effect of moisture in the air affects the growth rate of oxide in Germanium case
The growth of oxidation of HCl last Ge is investigated in dry oxygen ambient in room temperature with crystallographic orientation dependence
Summary
The water absorption on the semiconductor surface play important roles nanotechnology and give the effects on the surface chemistry. As for Silicon case, the water absorbed on hydrophilic silicon oxide surface causes large changes in adhesion and friction of nanoscale contact. This paper shows how the effect of moisture in the air affects the growth rate of oxide in Germanium case. These studies have not fully elucidated the evolution of absorbed moisture on the Ge oxide surface as function of relative humidity. To gain better understanding on Ge oxidation, the HCl and HF cleaning are compared in order to remove oxide completely and to prepare good passivation on Ge surface. The effect of moisture and stability of Cl terminated Ge (100) and (111) on the oxidation growth are discussed and compared
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