Abstract
Thermally induced Cd diffusion in CdZn(S)Se/Zn(S)Se multi-quantum well-structures has been investigated in order to study point defects and their generation in II–VI/III–V heterostructures and to find a thermally stable quantum well design. Samples were annealed in Zn atmosphere and diffusion coefficients were determined with secondary ion mass spectroscopy. Cd diffusion coefficients as low as 1.2 × 10 −18 cm 2/s at T = 575°C were found in a CdZnSSe/ZnSSe structure. Samples annealed in Zn atmosphere indicate a higher stability of CdZnSSe than of CdZnSe, but samples annealed in N 2 seem to show the opposite tendency. Laser diodes show low threshold current densities of 400 A/cm 2 for both kinds of wells.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.