Abstract
Thermally induced Cd diffusion in CdZn(S)Se/Zn(S)Se multi-quantum well-structures has been investigated in order to study point defects and their generation in II–VI/III–V heterostructures and to find a thermally stable quantum well design. Samples were annealed in Zn atmosphere and diffusion coefficients were determined with secondary ion mass spectroscopy. Cd diffusion coefficients as low as 1.2 × 10 −18 cm 2/s at T = 575°C were found in a CdZnSSe/ZnSSe structure. Samples annealed in Zn atmosphere indicate a higher stability of CdZnSSe than of CdZnSe, but samples annealed in N 2 seem to show the opposite tendency. Laser diodes show low threshold current densities of 400 A/cm 2 for both kinds of wells.
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