Abstract
Expressions giving the change in quiescent collector current due to variations in collector reverse saturation current. and base-emitter voltage have previously been derived for the Darlington composite transistor. In this paper these expressions arc used to obtain stability ratios that directly compare the stability of the Darlington composite transistor with that of a single transistor. A relationship is developed. incorporating these stability ratios, which shows that the Darlington composite is more stable than a single transistor to changes in Ic Bo.but with respect to changes in VBE, it is less stable. Furthermore, because these stability parameters are in opposition, their overall effect is to make the composite transistor about. 25% ( ± 10%) less stable than a single transistor when a proper choice of biasing resistors is made.
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