Abstract
We report here the effect of ultrathin IrMn buffer layer on the magnetic and spin transport properties of spintronic structure for current-induced magnetization switching. The insertion of the ultrathin (∼1nm) IrMn buffer layer drastically enhanced the coercive field of the fixed ferromagnetic layer from 36 to 215Oe. Interestingly, the ultrathin IrMn buffer layer even enhanced the magnetoresistance ratio about 30%, and consequently the spin polarization effect was enhanced by reducing the critical current density of magnetization switching from 3.13×108 to 1.16×108A∕cm2.
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