Abstract
In the study, the ITO/Cu-doped Fe2O3/ITO thin film RRAM is prepared using an RF sputtering system. The XRD pattern shows that the Cu:Fe2O3 thin film has a rhombohedral structure and does not display secondary or impurity phases for copper. Results revealed that the standard deviation and average voltage of Cu:Fe2O3 thin film are −1.98 and 0.92 V for Vset, respectively, while those for Vreset are 1.31 and 0.39 V, respectively. The resistive switching cycles and data retention test times of the Cu:Fe2O3 thin film device show that the on/off ratio is 39.4 and over 104 s. These results indicated that the Cu-doped Fe2O3 thin film can improve the performance of RRAM.
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