Stability, electronic and optical properties of buckled XO (X = Ge, Cu) graphenylene monolayers: A first-principles study

Abstract

The demand for sustainable semiconducting devices that can be used in various applications necessitates the development of revolutionary materials with multifunctional properties. Using van der Waals interactions corrected first-principles density functional theory (DFT) calculations, we propose porous g-XO (X = Ge, Cu) inorganic graphenylene monolayers. These monolayers extend the family of synthesized porous organic graphenylene materials. Stability checks reveal that the g-XO monolayers are energetically, mechanically, dynamically, and thermally stable. Additionally, g-GeO monolayer is auxetic 2D material. The auxetic property of g-GeO monolayer could be advantageous for important applications in mechanics and tissue engineering, electromechanical devices, and flexible electronics. Based on the HSE06 electronic band structure results, these g-CuO and g-GeO monolayers exhibit wide and ultra-wide indirect bandgap semiconducting properties, respectively. The satisfactory absorption coefficient of 104–105 cm−1 spanning the visible to UV region implies their potential for optoelectronics and UV shields applications. Our theoretical results provide a hints for the potential of these porous g-XO monolayers in energy harvesting/conversion, nanofiltration membranes, optoelectronic, thermoelectric, and flexible electronics.