Abstract
GaN vertical-conducting light-emitting diodes (LEDs) with high thermal stability mirror on Si substrate have been fabricated using a combination of wafer-bonding and laser lift-off techniques. The thermal stabilities of NiO/Ag and NiO/Ag/Ni mirrors in vertical GaN/mirror/Si structure were studied. It was found that the NiO/Ag/Ni mirror presents the best performance, where the specific contact resistance and the reflectivity can achieve 8.37 x 10-3 Ω-cm2 and 92 % at 470 nm after oxidation annealing (500oC for 10 min). The top Ni layer could protect the Ag mirror from degradation of the high temperature annealing. The output powers of GaN/sapphire LED and LEDs with NiO/Au/Ag and NiO/Ag/Ni mirrors show 4.5, 4.3 and 13 mW, respectively.
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