Abstract
Newly developed semiconductor thin-film gas sensors with a high sensitivity for Cl2 gas using (Zn2In2O5)x–(MgIn2O4)1−x multicomponent transparent conducting oxide thin films are described. The sensitivity of (Zn2In2O5)x–(MgIn2O4)1−x thin-film gas sensors could be controlled by altering the composition. The highest sensitivity was obtained using (Zn2In2O5)0.6–(MgIn2O4)0.4 thin films prepared by magnetron sputtering; when operated at 300°C, they were able to detect Cl2 gas at a minimum concentration of 0.01 ppm. The resistivity, carrier concentration and Hall mobility of the thin-film sensors were measured under operating conditions using the van der Pauw method. An increase or decrease of resistivity in thin-film sensors resulted from an decrease or increase, respectively, of both carrier concentration and Hall mobility. Our experiments showed that carrier transport in thin-film gas sensors is dominated by grain boundary scattering. The adsorption of chlorine results in a free electron trap, the same as that produced by adsorption of oxygen. The sensitivity and the resistance of (Zn2In2O5)0.6–(MgIn2O4)0.4 multicomponent oxide thin-film gas sensors exhibited very stable long term operation in air containing high concentrations of Cl2 gas.
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