Abstract
A memristor architecture based on porous oxide materials has the potential to be used in artificial synaptic devices. Herein, we present a memristor system employing a karst-like hierarchically porous (KLHP) silicon oxide structure with good stability and repeatability. The KLHP structure prepared by an electrochemical process and thermal oxidation exhibits high ON-OFF ratios up to 105 during the endurance test, and the data can be maintained for 105 s at a small read voltage 0.1 V. The mechanism of lithium ion migration in the porous silicon oxide structure has been discussed by a simulated model. The porous silicon oxide-based memristor is very promising because of the enhanced performance as well as easily accessed neuromorphic computing.
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