Stability and on–off chaotic states mechanisms of semiconductor lasers with optical injection on the new modified rate equation model

Abstract

In this paper, we consider the modified single-mode rate equations for a semiconductor laser (SCL) subjected to optical injection. In addition to the well-known control parameters of this kind of system, a new control one, namely the effective gain coefficient (EGC), interferes especially with its nonlinear dynamics. A stability analysis reveals that the unstable locking regions are drastically influenced by EGC, and this can contribute towards improving its accuracy. The generation and destruction of chaotic states through the period-doubling bifurcation route lead to the strengthening of these states. Furthermore, various phenomena such as intermittency bifurcation around the period windows, the general behavior of the SCL systems at the onset of the quasi-periodic regime near the coherence collapse regime and the nonlinear dynamic route sequences to the limit value of the EGC were studied with regard to the impact of this new control parameter.