Abstract
Pr2O3 is one of the most promising hetero-oxides that are the candidates of choice to replaceSiO2 as the gate dielectricmaterial for sub-0.1 µm CMOS technology. In order to enable process integration, however, hetero-oxides requiresubstantial characterization. In particular, the basic interaction mechanisms at theinterface to the silicon substrate are the key issues. A solid knowledge of thesemechanisms is required to address reliability arguments. The challenges in materialscience are to understand the chemical bonding of the hetero-oxides and Si on amicroscopic scale. We report on the specific variations in the electronic structurewhich are evident in the valence band features around resonant excitation atthe Pr 4d threshold. We also determine the valance band discontinuities at thePr2O3/Si(001) interface and follow the changes in the surface potentials to develop a band scheme, aprerequisite to understanding the properties of charge transport across that interface.
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