Stability Analysis in Top-Contact and Side-Contact Graphene Nanoribbon Interconnects

Abstract

ABSTRACT In this paper, we have analysed the relative stability of copper, top-contact (TC) and side-contact (SC) multilayer graphene nanoribbon (MLGNR)-based interconnects for next-generation VLSI interconnect technology. We have analysed the Bode stability by varying the interconnect length (10–100 µm) at 16 nm ITRS technology node. Similar analysis has been performed by varying the interconnect width (11–22 nm) at 10 µm interconnect length. It is observed that by increasing the interconnect length (l) as well as interconnect width (w), the relative stability increases for three different types of interconnects. Our analysis shows that the copper-based interconnect shows more stability due to high gain margin and phase margin for a wide range of interconnect length (10–100 µm) as compared to the TC-GNR and SC-GNR interconnect systems. It is also observed that by increasing the wire width, the gain and phase margin of TC-GNR is higher than copper and SC-GNR interconnect. Our analysis predicts that the TC-GNR is the best candidate for interconnect modelling in terms of stability across different technology nodes considering the other benefits of TC-GNR as compared with copper and SC-GNR.