Abstract
ZrSiN coatings were deposited on steel and silicon substrates by reactive sputtering of a composite ZrSi target. The coatings were oxidised in air in the 600–750°C temperature range. As-deposited and oxidised films were characterised by X-ray diffraction, micro-Raman spectroscopy, X-ray photoemission spectroscopy and glow discharge optical emission spectroscopy. The oxidation behaviour of ZrSiN coatings was compared to that of ZrN ones. It was demonstrated that addition of silicon in the 3–5at.% range into ZrN-based coatings promotes the onset of oxidation by nearly 100°C. The structure of the oxide layer was strongly dependent on the film’s silicon content: monoclinic zirconia for ZrN films, a mixture of monoclinic and tetragonal zirconia for intermediate silicon concentration and tetragonal zirconia for high silicon content. Finally, the stabilisation of the tetragonal form is discussed taking into account the occurrence of doping elements in the oxide layer, the intrinsic stresses in the oxidised films and the mean crystal size of zirconia grains.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.