Abstract
SrTiO3 (STO) thin films were deposited by atomic-layer- deposition (ALD) at a higher temperature (370{degree sign}C) using Ti(O-iPr) 2(thd)2 and Sr(thd)2 as Ti-, and Sr-precursors, respectively, and H2O as the oxidant, in order to improve the crystallinity and film density. With these precursors, the ALD process window of the STO film could be extended up to 400{degree sign}C. With the help of a seed-layer, more dense and well-crystallized STO films could be obtained even in the as-deposited state. The adoption of a seed-layer and the seed-layer annealing temperature are the crucial factors for obtaining high capacitance. In the case of a planar capacitor structure consisting of Pt/STO (27nm)/Ru(bottom), an equivalent oxide thickness of 0.73nm and leakage current density of 1x10-7 A/cm2 at 1V were achieved.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
