Abstract
Epitaxial SrTiO3 films were used as buffer layers and tunnel barriers for Ba0.6K0.4BiO3 (BKBO) films and tunnel junctions, respectively. In contrast to BKBO films grown directly on LaAlO3, films grown on SrTiO3 (001) buffer layers on LaAlO3 had a single (001) growth orientation, with Tc’s of 26 K and Δω=0.7°. These values are both equal to those obtained for growth on a SrTiO3 single crystal. A similar improvement was obtained for BKBO grown on SrTiO3-buffered NdGaO3 substrates. Tunnel junctions consisting of BKBO(001)/SrTiO3/BKBO layers had substantial contributions to the gap voltage from both the base and top BKBO electrodes.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
