Sputtering with an etch-free lift-off in thermal nanoimprint lithography

Abstract

Two low-cost techniques suitable for large area processing are combined to define submicrometer metal structures, thermal nanoimprint lithography, and sputtering. With very low residual layers after thermal nanoimprint, as obtained under partial cavity filling conditions, it is possible to skip the etching step for residual layer removal before sputtering. As imprinted structures typically feature a positive sidewall angle, the authors investigate the morphology of sputtered layers on sloped sidewalls. Independent from inclination, the sputtered layers exhibit a columnar structure with only a slight taper, where the crystallites extend perpendicular to the substrate through the whole layer thickness. This structure allows penetration of the solvent, swelling of the polymer, and lifting of the top layer as long as the adhesion to the substrate within the contact area is sufficiently high, thus enabling successful lift-off.