Abstract
We have investigated the dynamic behavior of laser-ablated Si particles by means of time-resolved X-ray absorption spectroscopy. Laser-ablated Si particles are found to induce sputtering of an Al plate which is located near the Si target. Moreover, it is suggested that Si cluster formation is enhanced by collisions between laser-ablated Si particles and Si particles backscattered by a Si wafer located near the Si target. We tentatively assign unidentified X-ray absorption peaks appearing near 120 eV to small Si clusters.
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