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Abstract
Treatment of zinc sulfide phosphors in atomic hydrogen not only produces radical-recombination luminescence (RRL) but also sputtering of the phosphor. The sputtering rate has been estimated for FKP-03k powder phosphor at various temperatures. The atomic hydrogen produces defects of etch-pit type on the surface of a single crystal. The long-term response of the RRL has been recorded for the FKP-03k phosphor and it is ascribed to the sputtering.
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