Abstract
A planar, multi-target sputtering approach was used to deposit tetragonal Pb(Zr, Ti)O3(PZT) films with Zr/(Zr+Ti) = 0.25−0.3 on Pt bottom electrodes for the use in thin film pyroelectric IR detector arrays. Low stress ferroelectric capacitor stacks are needed in these devices, because the sensing elements are arranged on thin surface micromachined membranes. In-situ deposited films exhibited the best electrical properties. Typical values for the dielectric constant, the dielectric loss and the pyroelectric coefficient are 250, <0.01 and >2×10−4 C/(m2K), respectively. Very strong imprint effects have been found in these films. Even after a heat treatment above the Curie point a pyroelectric coefficient of > 2×10−4 C/(m2K) has been found. This is advantageous for possible high temperature processing steps after PZT deposition in pyroelectric detector device manufaction.
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