Abstract
Sputtering of GaAs under oblique 2–10 keV Cs ion bombardment is studied by means of computer simulation as applied to the experimental data by Verdeil et al. published recently. Special attention is given to the angular distribution of sputtered atoms in the steady-state limit and to the relevant concentrations of surface Ga and As atoms, S Ga and S As, respectively. The best-fit values of S Ga and S As found in simulations favor segregation of As. A very pronounced effect of resputtering of atoms deposited on a collector of sputtered matter is noted. For forecasting purposes, the sputtering of GaAs under oblique bombardment with 0.1–1 keV Cs ions is also shortly considered.
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