Abstract
The yield of secondary ions and neutral Ga atoms, converted into positive ions on the surface of an Ir emitter was measured during the bombardment of a GaAs target with cluster ions Bim+ (m = 1–5) in the energy range 1–10 keV. A non-additive increase in the yield of secondary ions was observed with an increase in the number of atoms in the bombarding ions. An estimated calculation of the ionization probability of gallium during sputtering has been carried out. A decrease in the ionization probability with an increase in the number of atoms in the bombarding cluster ions was found.
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