Sputtering of Cu in a high pressure atmosphere

Abstract

The gas-flow-sputtering method, in which sputtered atoms were carried from the target to the substrate by Ar gas flow, gave a high deposition rate of Cu films in a high pressure (>0.5 Torr) atmosphere. At the Ar pressures investigated, the sputtered atoms with high initial energies lost all their energy by thermalization before arriving at the substrate. The structures of Cu films formed from the thermalized vapor by this sputtering were examined and the effects of substrate bias on the structure were investigated.