Sputtering of binary crystal surface under grazing ion bombardment

Abstract

The sputtering yields of GaAs(1 0 0) and GaP(1 0 0) surfaces at low energy grazing Ne, Be, Se ion bombardment have been calculated by computer simulation. The sputtering yields, subdivided into sputtering by each components and surface layers of compounds for a range of grazing angles of incidence have been presented. It was shown that in the case of grazing ion bombardment the layer-by-layer sputtering is possible and its optimum are observed within the small angle range of the glancing angles near the threshold sputtering angle. It was found that the possibility of preferential sputtering of one component essentially depends on the bombardment angle. At small glancing angles the preferential sputtering of heavy component atoms is possible.