Abstract
Yield data are reviewed for metal, semiconductor and insulator targets and found to be in good agreement with the predictions of transport-theory-based analytical results provided the non-linear (spike) regime and electronic sputtering are excluded. The surface-binding energies to be used in connection with yield calculations are discussed. Angular distributions from elemental targets, isotopic mixtures and binary alloys are analysed and the “missing-plane” surface-scattering model discussed and found to give a possible explanation of the data.
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