Abstract
AbstractResonance ionization mass spectrometry (RIMS) is used to determine the optimal sputtering conditions for sampling Si and SiO2 in depth profiling applications. Silicon RIMS signals are proportional to the Si concentration in these materials. Molecular formation during sputtering is significant with Xe+ at low energy (≤4 keV) and a high angle of incidence (∼60° from normal). Sputtering with Ar+ suppresses molecular formation. Because matrix effects are minimized with RIMS, pecularities in profiles at interfaces are easy to observe. The RIMS profiles of Ni and Co implants into SiO2 on Si show evidence of enhanced metal‐silicon bonding at the oxide/substrate interface.
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