Abstract
Co-Cr-Ta thin films were deposited using a facing targets sputtering [FTS] apparatus and a new FTS coater. The transferred heat flux from the targets and plasma to the growing films was evaluated using a calorimeter sensor. The morphology of chemically etched films as well as as-deposited ones was observed using high resolution TEM. It has been concluded that heat exchange energy of adatoms above 0.3 W/cm/sup 2/, perfect suppress of bombardment to the films by energetic particles and moderate substrate temperature of 150/spl deg/C are essential for depositing Co-Cr-Ta thin films with voidless morphology, smaller than 10 nm perpendicular magnetic domains and anisotropy field above 4 KOe at deposition rate of 300 nm/min.
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