Abstract
Oxygen cluster ion beams and/or monomer ion beams were used to investigate the sputtering and oxidation of solid surfaces such as silicon (Si) and poly-lactic acid (PLA) surfaces. For the oxygen cluster ion irradiation, the sputtered depth increased with increase of the acceleration voltage, and the sputtering yield was much larger than the value for oxygen monomer ion irradiation. Furthermore, for the oxidation process of Si and PLA surfaces, the simultaneous use of oxygen ion beams was more effective than either the cluster ion irradiation or the monomer ion irradiation.
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