Abstract
Indium tin oxide (ITO) thin films for application in thin-film silicon solar cells with superior electrical and optical properties (resistivity ranging from 1.4 to 8.4×10−4Ωcm; transparency of >80%) have been investigated. ITO layers were deposited by radio-frequency (RF) magnetron sputtering process at different argon gas pressures and substrate temperatures ranging from room temperature to 280°C. The main goal was to identify the relationship between structural and electrical properties. Generally, ITO layers were rather smooth with granular topography; electro-optically superior layers exhibited substantially different surface morphology of large, well-organized domain formations. Hall mobility of remarkably high value of 49cm2/Vs (resistivity of 2.6×10−4Ωcm) was achieved for the ITO layers, which were deposited at surprisingly low temperature of 125°C. ITO process has been successfully applied, even at room temperature, to fabricate front contacts for microcrystalline silicon solar cells, exhibiting excellent performance on both rigid and flexible substrates.
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