Abstract
This work focuses on demonstrating the suitability of various high resistivity transparent (HRT) layers prepared by magnetron sputtering for sputtered CdS/CdTe cells. HRT buffer layers added between the transparent conducting oxide (TCO), and the CdS layer are important for reducing the effects of non-uniformities and shunts in large-area thin-film devices. CdS/CdTe cells were fabricated on Pilkington TEC 7 glass coated with a sputter deposited HRT layer of ZnO:Al or SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . In some cases O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> was added to the Ar sputter gas to increase the resistivity of the HRT buffer layers. Film properties were optimized for HRT performance by adjustments in the substrate deposition temperature, sputter gas pressure, and RF power. Best results have been obtained with reactively sputtered ZnO:Al with 2 % O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> in Ar.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
