Abstract
Metallization of Schottky surface gates by sputtering Au on strained Si∕SiGe heterojunctions enables the depletion of the two dimensional electron gas at a relatively small voltage while maintaining an extremely low level of leakage current. A fabrication process has been developed to enable the formation of submicron Au electrodes sputtered onto Si∕SiGe without the need of a wetting layer.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
