Abstract
Aluminum–nitrogen (Al–N) codoped zinc oxide (ZnO) thin films were grown on glass substrate by radio frequency (RF) reactive magnetron sputtering using aluminum doped zinc oxide (AZO, 2.5wt% Al2O3) target and N2 as reactive gas. The structural, morphology, optical and electrical properties were also investigated with different flow rate of N2 gas. X-ray diffraction results shows that codoped ZnO thin films have similar wurtzite structure like undoped ZnO film. Al–N thin films have high transparency 78% in visible region as the nitrogen flow rate increases the transparency and band gap decreases. The best p-type codoped sample shows a resistivity and hole concentration of 0.554Ωcm and 8.3×1019cm−3 at room temperature, respectively. Current–voltage (I–V) characteristics of p-type codoped ZnO thin films are also discussed.
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