Abstract
A novel experimental method for the investigation of secondary emission processes during ion bombardment of a solid surface is proposed. This method gives a unique possibility to measure secondary emission characteristics at various fixed surface concentrations, n v, of implanted ions. Some fixed n v values in the interval 0.01 n ∞⩽ n v⩽ n ∞ ( n ∞ is the equil implanted particles) may be obtained by choosing the surface renewal velocity V. Using this method, we investigated the sputter-induced photon emission from a Ta surface bombarded by a Dy + ion beam. It was observed that the photon yield and spectrum shape were substantially dependent on the n v value. The main results of our research are the following: (1) the continuum radiation source is the excited molecule of metal-oxygen type (DyO, TaO, etc.), and (2) this method allows us to detect the excited adsorbed particles from submonolayer surface coverage.
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