Abstract
Schottky barrier diodes are made by ac magnetron deposition of Au on p-type GaAs substrates. Sputtering causes donor-like defects in the surface region of semiconductors, and these donor-like states compensate mostly the Zn shallow acceptor states over distances of 200 nm below the surface. These defects are attributed to the As Frenkel pairs VAs–Asi with an energy level at 0.27 eV below the conduction band. The As Frenkel pairs are responsible for the Fermi level pinning at metal–semiconductor interfaces and also for the observed change in barrier height in sputtered GaAs material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
