Abstract
We describe the design of a new ion source that combines a hot filament hollow cathode source with a sputtering source. This combination makes it possible to provide ion beams of a wider range that previously could not be used due to respective high melting points and low vapor pressure of the needed elements. We demonstrate the sources viability for molybdenum, cobalt, niobium and the rare-earth element gadolinium. An implantation current of 20–900nA on the sample, depending on the element, could be achieved. Moreover, we experimentally prove that these ion beams are suitable for ultra-low energy implantation into 2D materials like graphene and transition metal dichalcogenides (TMDs). Furthermore, computational studies were conducted to investigate the ion trajectories within the source and ion implantation into 2D materials. RBS and PIXE measurements were performed to quantitative investigate the implanted samples.
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