Sputter Depth Profiling of Multiple Short-Period BN δ-Doped Si by Work Function Measurement

Abstract

Sputter depth profiling of multiple short-period BN δ-doped Si on the basis of work function (WF) measurement using the secondary electron (SE) method was investigated. The concentration of boron in the sample was confirmed to be less than the detection limit of the current Auger electron spectroscopy system. The results revealed that BN δ-doped layers can be detected as a periodic change in the WF of the order of ∼0.01 eV. These results confirmed that sputter depth profiling on the basis of WF measurement using the SE method is effective for the characterization of dopant atoms in semiconductor devices with high lateral and depth resolutions.