Abstract
The effect of tin concentration on the photovoltaic properties of indium tin oxide (ITO)/p-InP junctions prepared at 340 degrees C by the spray pyrolysis technique has been reported. With increasing tin concentration (up to 25% by weight) in the ITO films, the illuminated output parameters of the junctions, Voc. Jsc and fill factor (FF) (and consequently the efficiency) are affected very little, but appreciable changes are observed in the diode ideality factor (n), reverse saturation current (J0) and spectral response. A maximum efficiency of 10.7% has been achieved under 100 mW cm-2 illumination for junctions (without antireflection coating and top grid contact) having 5% by weight of tin. An attempt has been made to understand the results qualitatively.
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