Abstract
Indium oxide (In 2O 3) thin films have been prepared by spray pyrolysis using a very low concentration of indium precursor. The spray process parameters like the concentration of precursor in spray solution, ethanol+water, air-flow rate, substrate–nozzle distance and substrate temperature have been optimized for obtaining optically transparent, conducting and device-quality In 2O 3 films. The material properties are reported by studying the structural, electrical and optical properties of the In 2O 3 films prepared at a relatively lower temperature of 380°C. The surface morphology has been studied by scanning electron microscopy and atomic force microscopy. A possible film growth mechanism has been proposed for preparing device-quality In 2O 3 films using lower substrate temperatures.
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