Abstract
Zn1−xMgxO:In films were deposited on quartz substrates via ultrasonic spray pyrolysis (USP). By tuning the molar ratio of Zn and Mg sources, the tunable band gap in ZnMgO:In films were realized. The obtained films exhibited wurtzite crystal structure with a preferential c-axis orientation. Larger grain size was obtained with increasing the Mg introduction. Photoluminescence (PL) indicated that the peaks of near-band-edge (NBE) emission appeared as a blue-shift from 378nm to 370nm, labeled as x value increase from 0 to 0.15. Optical band gap (Eg) calculated from the absorption edge further confirmed the blue-shift phenomenon due to the Mg substitution for Zn lattice sites. The average transmittance was about 90% in the visible wavelength region (400–800nm). The increasing resistivity from 6.70×10−3Ωcm to 2.14×10−2Ωcm and decreasing mobility from 24.7cm2V−1S−1 to 6.46cm2V−1S−1 were observed.
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