Abstract
GaN films were grown at 550 °C and subsequently at 1040 °C on sapphire (101¯2) (r-plane) substrates by using hydride vapor phase epitaxy with different layer thicknesses. As the thickness of a low-temperature-grown GaN layer was increased, a preferred orientation of GaN grown at 1040 °C changed from [112¯0] to [0001]. A detailed atomistic model reveals that this spontaneous transition in preferred orientation is due to the formation of inversion domain boundaries and stacking faults. This result has a significant implication that tailoring film characteristics in terms of controllability of preferred orientation may be possible independent of substrate orientation.
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